In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 mu m grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a "grainlike" morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function Phi(MoO3) = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance-temperature curves showed a semiconducting character. Published by the AVS.
MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties / Macis, Salvatore; Aramo, Carla; Bonavolontà, Carmela; Cibin, Giannantonio; D’Elia, Alessandro; Davoli, Ivan; De Lucia, Mario; Lucci, Massimiliano; Lupi, Stefano; Miliucci, Marco; Notargiacomo, Andrea; Ottaviani, Carlo; Quaresima, Claudio; Scarselli, Manuela; Scifo, Jessica; Valentino, Massimo; De Padova, Paola; Marcelli, Augusto. - In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS. - ISSN 0734-2101. - 37:2(2019), p. 021513. [10.1116/1.5078794]
MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties
Salvatore Macis;Stefano Lupi;
2019
Abstract
In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 mu m grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a "grainlike" morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function Phi(MoO3) = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance-temperature curves showed a semiconducting character. Published by the AVS.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
